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  any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft? control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all sanyo products described or contained herein. pnp/npn epitaxial planar silicon transistors dc/dc converter applications ordering number:enn5613 2sa1973/2sC5310 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 60100ts (koto) ta-1556 no.5613C1/4 0.4 0.95 0.95 1.9 2.9 0.5 1.5 2.5 0.5 0.16 0 to 0.1 0.8 1.1 2 3 1 package dimensions unit:mm 2018b [2sa1973/2sC5310] ?c ?c electrical characteristics at ta = 25?c 1 : base 2 : emitter 3 : collector sanyo : cp features adoption of fbet, mbit processes. large current capacitance. low collector-to-emitter saturation voltage. high-speed switching. ultrasmall package facilitates miniaturization in end products. specifications ( ) : 2sa1973 absolute maximum ratings at ta = 25?c mounted on a glass-epoxy board (20 30 1.6mm) r e t e m a r a pl o b m y ss n o i t i d n o cs g n i t a rt i n u e g a t l o v e s a b - o t - r o t c e l l o cv o b c 0 3 ) C (v e g a t l o v r e t t i m e - o t - r o t c e l l o cv o e c 5 2 ) C (v e g a t l o v e s a b - o t - r e t t i m ev o b e 6 ) C (v t n e r r u c r o t c e l l o ci c 1 ) C (a ) e s l u p ( t n e r r u c r o t c e l l o ci p c 3 ) C (a t n e r r u c e s a bi b 0 0 2 ) C (a m n o i t a p i s s i d r o t c e l l o cp c 0 5 2w m e r u t a r e p m e t n o i t c n u jj t 0 5 1 e r u t a r e p m e t e g a r o t sg t s t 0 5 1 + o t 5 5 C r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m t n e r r u c f f o t u c r o t c e l l o ci o b c v b c i , v 0 2 ) C ( = e 0 =1 . 0 ) C (a t n e r r u c f f o t u c r e t t i m ei o b e v b e i , v 3 ) C ( = c 0 =1 . 0 ) C (a n i a g t n e r r u c c dh e f v e c i , v 2 ) C ( = c a m 0 0 1 ) C ( =* 5 3 1* 0 0 4 k n a r5 6 h e f 0 7 2 o t 5 3 10 0 4 o t 0 0 2 * : the 2sa1973/2sC5310 are classified by 100ma h fe as follows : continued on next page. marking : 2sa1973 : ns 2sC5310 : nn www.datasheet.co.kr datasheet pdf - http://www..net/
2sa1973/2sC5310 no.5613C2/4 continued on preceding page. switching time test circuit v r r l v cc =12v v be =--5v 20i b1 = --20i b2 = i c =500ma + + 50 w input output 1k 100 m f 470 f pw=20 m s i b1 d.c. 1% i b2 (for pnp, the polarity is reversed.) ta=75 c --25 c 25 c 2sa1973 v ce =--2v pulse --1000 --800 --600 --200 --400 0 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 i c -- v be itr08236 2sC5310 v ce =2v pulse i c -- v be itr08237 0 0.2 0.4 0.6 0.8 1.2 1.0 ta=75 c --25 c 1000 800 600 200 400 0 25 c i b =0 --2ma i b =0 2ma 4ma 6ma --6ma itr08235 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.8 --2.0 --1.6 --0.4 --1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.8 1.6 2.0 0.4 1.2 i c -- v ce 2sa1973 pulse itr08234 i c -- v ce 2sC5310 pulse --4ma collector current, i c ? collector current, i c ?a collector-to-emitter voltage, v ce ? collector current, i c ? collector-to-emitter voltage, v ce ? base-to-emitter voltage, v be ? collector current, i c ?a base-to-emitter voltage, v be ? r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m t c u d o r p h t d i w d n a b - n i a gf t v e c i , v 0 1 ) C ( = c a m 0 5 ) C ( =0 5 1z h m e c n a t i c a p a c t u p t u ob o cv b c z h m 1 = f , v 0 1 ) C ( =9 1 ) 2 3 (f p e g a t l o v n o i t a r u t a s r e t t i m e - o t - r o t c e l l o cv e c ) t a s (i c i , a m 0 0 5 ) C ( = b a m 5 2 ) C ( = ) 0 5 1 C () 0 0 3 C (v m 0 0 10 0 2v m e g a t l o v n o i t a r u t a s r e t t i m e - o t - e s a bv e b ) t a s (i c i , a m 0 0 5 ) C ( = b a m 5 2 ) C ( =5 8 . 0 ) C (2 . 1 ) C (v e g a t l o v n w o d k a e r b e s a b - o t - r o t c e l l o cv o b c ) r b ( i c i , a 0 1 ) C ( = e 0 =0 3 ) C (v e g a t l o v n w o d k a e r b r e t t i m e - o t - r o t c e l l o cv o e c ) r b ( i c r , a m 1 ) C ( = e b = 5 2 ) C (v e g a t l o v n w o d k a e r b e s a b - o t - r e t t i m ev o b e ) r b ( i e i , a 0 1 ) C ( = c 0 =6 ) C (v e m i t n o - n r u tt n o t i u c r i c t s e t d e i f i c e p s e e s 0 6 ) 0 6 (s n e m i t e g a r o t st g t s t i u c r i c t s e t d e i f i c e p s e e s ) 0 5 3 ( s n 0 0 5 s n e m i t l l a ft f t i u c r i c t s e t d e i f i c e p s e e s 5 2 ) 5 2 (s n www.datasheet.co.kr datasheet pdf - http://www..net/
2sa1973/2sC5310 no.5613C3/4 v ce (sat) -- i c --0.01 23 57 7 --0.1 23 23 57 --1.0 --100 7 5 3 2 --1000 7 5 3 2 7 --10 -- 2 5 c ta=75 c --25 c ta=75 c v ce (sat) -- i c itr08244 itr08245 2sC5310 i c / i b =20 pulse 2sa1973 i c / i b =20 pulse cob -- v cb itr08243 2sa1973 v ce =--10v pulse cob -- v cb 3 2 7 5 100 10 3 2 7 5 10 100 --1.0 37 73 2 --10 2 55 1.0 37 73 2 10 2 55 itr08242 f t -- i c 100 10 7 5 1000 7 5 3 2 3 2 25 3 --10 7 --100 25 37 --1000 25 3 10 7 100 25 37 1000 100 10 7 5 3 2 1000 7 5 3 2 itr08240 2sC5310 v ce =10v pulse 2sa1973 f=1mhz 2sC5310 f=1mhz itr08241 f t -- i c 25 c 0.01 23 57 7 0.1 23 23 57 1.0 100 7 5 3 2 5 3 2 7 10 25 c ta=75 c --25 c h fe -- i c 2sa1973 v ce =--2v pulse itr08238 100 7 7 5 5 3 2 1000 73 --0.01 7 3 22 5 --0.1 7 3 25 --1.0 73 0.01 7 3 22 5 0.1 7 3 25 1.0 ta=75 c -- 2 5 c 100 7 5 5 3 2 h fe -- i c 25 c 2sC5310 v ce =2v pulse itr08239 25 c dc current gain, h fe collector current, i c ? dc current gain, h fe collector current, i c ? gain-bandwidth product, f t mhz collector current, i c ?a gain-bandwidth product, f t mhz collector current, i c ?a output capacitance, cob pf collector-to-base voltage, v cb -- v output capacitance, cob pf collector-to-base voltage, v cb -- v collector current, i c ? collector-to-emitter saturation voltage, v ce (sat) mv collector current, i c ? collector-to-emitter saturation voltage, v ce (sat) mv www.datasheet.co.kr datasheet pdf - http://www..net/
specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of june, 2000. specifications and information herein are subject to change without notice. 2sa1973/2sC5310 ps no.5613C4/4 2sa1785 / 2sc4645 0 280 240 250 200 160 120 80 40 20 060 40 80 100 140 120 160 p c -- ta itr08249 pt=100 s 0.1 5 2 5 3 1.0 7 7 5 2 3 7 5 2 3 7 0.01 10 7 1.0 25 37 25 325 3 dc operation 10ms i cp 1ms i c itr08248 ta=25 c single pulse mounted on a glass-epoxy board (20 30 1.6mm) for pnp, the minus sign (? is omitted. 2sa1973 / 2sC5310 2sa1973 / 2sC5310 a s o v be (sat) -- i c -- 1 . 0 3 3 2 7 5 2sa1973 i c / i b =20 pulse itr08246 25 c v be (sat) -- i c itr08247 25 c --0.01 23 57 7 --0.1 23 23 57 -- 1 . 0 --25 c ta=75 c 1.0 3 3 2 7 5 2sC5310 i c / i b =20 pulse 0.01 23 57 7 0.1 23 23 57 1.0 --25 c ta=75 c collector current, i c ? base-to-emitter saturation voltage, v be (sat) v collector current, i c ? base-to-emitter saturation voltage, v be (sat) v collector current, i c ? collector-to-emitter voltage, v ce ? collector dissipation, p c ?w ambient temperature, ta ?c mounted on a glass-epoxy board (20 30 1.6mm) www.datasheet.co.kr datasheet pdf - http://www..net/


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